Plasma passivation etching for hgcdte

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August undefined, 2024

WebA fabrication procedure using dry plasma process technology has been developed for HgCdTe photoconductive detectors. Dry plasma, in the form of CH 4 /H 2 reactive ion etching, was used in a multi-functional process capacity after the mesa delineation of individual detector elements and prior to metal contact deposition to (i) etch the … Webplasma processing to perform passivation etching of HgCdTe. Plasma pro-cessing promises the ability to create small vias, 2 lm or less with excellent uniformity across a …

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WebApr 14, 2024 · The Bosch process, with SF 6 as the etching gas and C 4 F 8 as the passivation gas used alternately in the reactor chamber, cycles the etching and passivation steps for deep silicon etching [34,35,36,37]. During the passivation cycle, C 4 F 8 is ionized by ICP power and deposited on all exposed surfaces forming a fluorocarbon polymer to … WebThe main issue of HgCdTe passivation consists in sur-face structure instability due to weakness of Hg–Te bonds ... and adventitious carbon without etching HgCdTe [22]. The ... cases of glow discharge and remote RF plasma resulting HgCdTe native oxide thickness, measured by means of x-ray photoelectron spectroscopy [23], was about 2 nm ... guinea monetary value

Sidewall passivation assisted by a silicon coverplate during …

WebMay 14, 2007 · Inductively coupled plasma (ICP) chemistry based on a mixture of CH 4, Ar, and H 2 was investigated for the purpose of delineating HgCdTe mesa structures and vias typically used in the fabrication of second and third generation infrared photo detector arrays. We report on ICP etching uniformity results and correlate them with plasma … WebMay 1, 2024 · Plasma etching stands as the main etching technique of HgCdTe nowadays for its superior uniformity over large samples and run to run stability. However, in … WebMethods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed … guineanlahti

Plasma Passivation Etching for HgCdTe Semantic Scholar

A review on plasma-etch-process induced damage of HgCdTe

Webplasma processing to perform passivation etching of HgCdTe. Plasma pro-cessing promises the ability to create small vias, 2 lm or less with excellent uniformity across a wafer, good run-to-run uniformity, and good etch rate control. In this study we developed processes to controllably etch CdTe, the WebA similar effect is obtained in HBr plasma by increasing the ICP power. When O 2 is added to the gas mixture, the deposited layer is changed from Si rich to more stoichiometric silicon oxide ( Si O 2 ) and the passivation effect is enhanced. EDX-TEM analysis has also been carried out on InP samples etched in Cl 2 – N 2 plasma for comparison. guinean liisaWebAug 14, 2024 · Our interest in introducing oxygen and/or nitrogen atoms in CH 4 /H 2 /Ar plasma mixtures by means of organic precursors in the place of CH 4 or by partly substituting O 2 or N 2 O for H 2 and thereby controlling carbon deposition and surface passivation when etching HgCdTe under low substrate bias conditions is investigated in … guinea news jalloh

"WebSep 1, 2024 · Most of the HgCdTe infrared detectors are fabricated by mesa geometry using a wet chemical or plasma etching techniques. The mesa definition etch process induces undesirable changes in HgCdTe surface properties. In narrow bandgap materials these surface changes could deteriorate a device performance. " - Plasma passivation etching for hgcdte

Plasma passivation etching for hgcdte

Uniformity studies of inductively coupled plasma etching in …

WebPlasma etching is a form of plasma processing used to fabricate integrated circuits.It involves a high-speed stream of glow discharge of an appropriate gas mixture being shot … WebMay 3, 2001 · Dry plasma, in the form of CH4/H2 reactive ion etching, was used in a multi-functional process capacity after the mesa delineation of individual detector elements …

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WebOct 1, 2024 · According to the research results of HgCdTe gate-controlled diodes, when the passivation layer is depleted, the surface recombination current, surface tunneling current, … WebMay 25, 2024 · The etch rates of HgCdTe were examined to be similar at different temperatures and the smoothness of the etched surface improves at cryogenic …

WebEx situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiOx passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl2-based ICP etching results in a significantly P-rich surface. WebEtch selectivity during plasma-assisted etching of SiO 2 and SiN x: Transitioning from reactive ion etching to atomic layer etching. Ryan J. Gasvoda, Zhonghao Zhang, ... Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas.

WebApr 24, 2000 · This letter examines the effect that hydrogenation has on the quality of industry-standard ZnS passivating films. The hydrogenation is achieved by exposing the samples to a H2/CH4 plasma that is... WebMar 29, 2024 · An inductive couple plasma reactive ion etching (ICP-RIE) system followed by a citric acid-based isotropic wet etching solution of C 6 H 8 O 7:H 2 O 2:H 3 PO 4 ∶ H 2 O (5:2:1:20) was used during ...

WebJun 2, 2009 · In this study we developed processes to controllably etch CdTe, the most common passivation material used for photovoltaic-based HgCdTe devices. We created a process based on xenon gas that allows for the slow controllable CdTe etch at only 0.035 …

WebJul 15, 2009 · Mercury cadmium telluride (MCT) CH {sub 4}-H {sub 2} based chemistry inductively coupled plasma (ICP) etching mechanisms are investigated. The effect of Ar and N {sub 2} addition in the mixture on plasma and MCT surface characteristics are studied by Langmuir probe, mass spectrometry, and x-ray photoelectron spectroscopy (XPS). guinea lokalisierungWebAug 14, 2024 · Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled … guinean jalkapallomaajoukkueWebWe would like to use the advantages of “dry” plasma processing to perform passivation etching of HgCdTe. Plasma processing promises the ability to create small vias, 2 μm or less with excellent uniformity across a wafer, good run-to-run uniformity, and good etch rate control. In this study we developed processes to controllably etch CdTe ... pillow luvWebScienceDirect.com Science, health and medical journals, full text ... guinea money valueWebJun 1, 2024 · It has been shown that the CdTe films deposited using this low-temperature method, can be used as the passivation coatings for the infrared (IR) detectors based on the HgCdTe epitaxial layers grown on the CdZnTe monocrystalline substrates, not affecting the HgCdTe properties. ... (ICP) etching of HgCdTe are summarized. Common plasma-etch ... guinean syliWebHydrogen-based dry plasmas can be used for etch- ing mercury cadmium telluride (HgCdTe), in addition to etching and cleaning other II-VI compounds such as zinc sulfide (ZnS), cadmium zinc telluride (CdZnTe), and cadmium telluride (CdTe), that are used as sub- strate and passivating materials for HgCdTe infrared devices.1–4For the fabrication of … guinea linksWebDec 8, 2000 · Hydrogenation of ZnS passivation for HgCdTe. Abstract: The physical and electrical effects of exposing ZnS passivation to a H/sub 2//CH/sub 4/ reactive ion etch … pillow made in usa as seen on tv